Effect of hot-carrier-induced interface states distribution on linear drain current degradation in 0.35 m n-type lateral diffused metal-oxide-semiconductor transistors
نویسندگان
چکیده
drain current degradation in 0.35 m n-type lateral diffused metal-oxide-semiconductor transistors J. R. Lee, Jone F. Chen, Kuo-Ming Wu, C. M. Liu, and S. L. Hsu Institute of Microelectronics, Department of Electrical Engineering and Advanced Optoelectronic Technology Center, National Cheng Kung University, No. 1 University Road, Tainan 70101, Taiwan Taiwan Semiconductor Manufacturing Company, Ltd., No. 121, Park Ave. 3, Science-Based Industrial Park, Hsin-Chu 30077, Taiwan
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